Electron transport in quantum well heterotransistors
DOI:
https://doi.org/10.30888/2663-5712.2020-06-06-137Keywords:
electron transport, scattering mechanisms; alloying potential; relaxation times; submicron heterostructural transistors; quantum wellsAbstract
The paper presents an analysis of electron transport processes in quantum wells of submicron heterostructural transistors. Techniques for modeling processes in nanoheterostructures have been developed, considering specific quantum effects and scatteringMetrics
References
T. Suemitsu, InP and GaN high electron mobility transistors for millimeter-wave application, IEICE 2015 Electronics Express, т. 12, № 13, pp. 1-12, 2015.
M. Navid, A. Anjum, Sharadindu Gopal Kirtania, A. Farhana, A. Md. Kawsar, Quazi Deen Mohd Khosru, High Electron Mobility Transistors: Performance Analysis, Research Trend and Applications, Intech open science, pp. 45-64, 2017.
M. A. Alim, Ali A Rezazadeh, Norshakila Haris, C. Gaquiere, Anomaly and Intrinsic Capacitance Behaviour Over Temperature of AlGaN/GaN/SiC and AlGaAs/GaAs HEMTs for Microwave Application, в Proceedings of the 11th European Microwave Integrated Circuits Conference. 2016 EuMA, London, UK, 3–4 Oct 2016.
N. Zagni, F. M. Puglisi, G. Verzellesi, P. Pavan, Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs, IEEE TRANSACTIONS ON ELECTRON DEVICES, т. 6, № 11, pp. 4607-4614, 2017. DOI: 10.1109/TED.2017.2754323
M. Fallahnejad, A. Kashaniniya, M. Vadizadeh, Design and Simulation Noise Characteristics of AlGaN/GaN HEMT on SIC Substrate for Low Noise Applications, IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE) e-ISSN: 2278-1676,p-ISSN: 2320-3331, т. 10, № 3.Ver.II(May–Jun.2015), pp. 31-37, 2015. DOI: 10.9790/1676-10323137
F. Li, L. H. Qing, D. P. Klemer, Numerical Simulation of High Electron Mobility Transistors based on the Spectral Element Method, ACES JOURNAL, т. 31, № 10, pp. 1144-1150, 2016.
V. Moskaliuk, V. Timofeev, A. Fedyay, Ultra-high-speed electronic devices, Saarbrucken, Germany: LAP LAMBERT Academic Publishing, 2014.
A. Shik, L. Bakueva, S. Musikhin, S. Rykov, Physics of low-dimensional systems, St. Petersburg: Nauka, 2001, p. 160.
V. Zubkov, Modeling of volt-farad characteristics of heterostructures with quantum wells using a self-consistent solution of the Schrödinger and Poisson equations, St. Petersburg. : FTI A.F. Ioffe RAS, vol. 40, № 10, pp. 1236-1240, 2006.
L. Landau, E. Livshits, Theoretical Physics. Volume 3. Quantum mechanics. Nonrelativistic theory, M .: Nauka, 1989, p. 766
V. Dragunov, I. Neizvestny, V. Gridchin, Fundamentals of nanoelectronics, M.: Logos, 2006, p. 496.
V. Timofeyev, E. Faleyeva, Relaxation processes analysis in heterotransistors with systems of quantum wells and quantum dots, 2014 IEEE 34th International Scientific Conference Electronics and Nanotechnology (ELNANO), Kiev, Ukraine, April 15-18, 2014, pp. 115-118, 2014. DOI: 10.1109/ELNANO.2014.6873949
К. Kulikov, I. Baida, V. Moskaliuk, V. Timofeyev, Conductance Cutoff of A3B5 Nitrides at High-Frequency Region, 2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO), pp. 101-105., 2018. DOI: 10.1109/ELNANO.2018.8477497
Downloads
Published
How to Cite
Issue
Section
License
Copyright (c) 2020 Authors
This work is licensed under a Creative Commons Attribution 4.0 International License.
